Rating: 4.6 / 5 (6991 votes)
Downloads: 55930
>>>CLICK HERE TO DOWNLOAD<<<
- 2n5551 more results similar description - 2n5551 more results. ambient figure 6. applications • switching and amplification in high voltage applications such as telephony. specifications brochure, brd8011/ d. 2n5551 / mmbt5551 rev. 2n5551 datasheet ( pdf) - fairchild semiconductor description npn general purpose amplifier 2n5551 datasheet ( html) - fairchild semiconductor 2n5551 product details description this device is designed for general- purpose high- voltage amplifiers and gas discharge display drivers. 0 1 june 2n5551 / mmbt5551 npn general- purpose amplifier ordering information( 1) note: 1. 2n5551 transistor（ npn ） features to power dissipation p cm : 0. 0 vdc) 2n5550 2n5551 ( ic = 50 madc, vce = 5. manufacturer: on semiconductor.
rochester electronics 2n5551 datasheet. marking: full part number maximum ratings: ( ta= 25° c unless otherwise noted) operating and storage junction temperature thermal resistance thermal resistance tj, tstg ja jc - 65 to° c ° c/ w ° c/ w. 2n5551 datasheet ( pdf) - on semiconductor preview pdf download html 2n5551 datasheet ( pdf) - on semiconductor description mplifier transistors ( npn silicon) 2n5551 datasheet ( html) - on semiconductor 2n5551 product details amplifier transistors npn silicon features • pb− free packages are available* similar part no. base) suffix “ - y” means hfe 180~ 240 in 2n5551 ( test condition: ic = 10 ma, vce = 5. description: amplifier transistors. 2n5551 min max a 3. 625 w（ tamb= 25℃ ） collector current 1. 0 vdc) 2n5550 2n5551 hfe− − − − − collector− emitter saturation voltage ( ic = 10 madc, ib = 1. package dimensions. 300 ma) · high voltage ( max.
- 2n5551 datasheet pdf 2n5551 more results. com 5 ordering information ( note 5) part number top mark package shipping† 2n5551ta 5551 to− 92− 3 ( pb− free) 2, 000 / ammo pack 2n5551tfr 5551 to− 92− 3 ( pb− free) 2, 000 / tape & reel. 2n5551 is a general- purpose npn bipolar junction transistor ( bjt) commonly used in amplifier and switching applications. view and download the latest rochester electronics 2n5551 transistors pdf datasheet including technical specifications. 2n5551 datasheet ( pdf) - on semiconductor. 300 ma) 2n5551 datasheet pdf high voltage ( max. the 2n5551hr is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose ( tid). com npn general- purpose amplifier 2n5551 description this device is designed for general− purpose high− voltage amplifiers and gas discharge display drivers. suffix “ - c” means center collector in 2n5551 ( 1. 0 pf f= 1mhz in p ut ca p 2n5551 datasheet pdf acitance cib veb= 0. 5v, ic= pf f= 1mhz noise fi g ure.
it has a maximum current gain ( hfe) of 400, a collector current ( ic) rating of 600ma, and a maximum collector- emitter voltage ( vceo) of 160v. 20 semiconductors product specification transistors 2n5550; 2n5551 features pinning low current ( max. qualified as per escc 5202/ 019 specification and available in lcc- 3 and ub hermetic packages, it is specifically recommended for space and harsh environment applications and. description: mplifier transistors( npn silicon). 2n5551 80 − dc current gain ic = 10 ma; vce = 5 v; see fig. mplifier transistors ( npn silicon) file size. typical performance characteristics - ambient temperature ( ° c) a reverse bias voltage [ v] ω figure 5.
some of the technical specifications of 2n5551 are:. 3 1 publication order number: 2n5550/ d 2n5550, 2n5551 preferred device amplifier transistors. description npn high- voltage transistor in a to- 92; sot54 plastic package. file size: 188kbytes. features these devices are pb− free, • halogen free/ bfr free and are rohs compliant absolute maximum ratings ( note 1). reverse temperature voltage physical dimensions to- 92 ( bulk) d figure 10. - 2n5551 more results similar description - 2n5551.
author: ainistrator. ( pb− free) † for information on 2n5551 datasheet pdf tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging. semiconductor components industries, llc, june, − rev. 2n5551 ( ic = 10 madc, vce = 5.
applications · switching and amplification in high voltage applications such as telephony. 2 2n5550 20 − 2n5551 30 − vcesat collector- emitter saturation voltage ic = 10 ma; ib = 1ma − 150 mv collector- emitter saturation voltage ic = 50 ma; ib = 5ma 2n5550 − 250 mv 2n5551 − 200 mv. 3- lead, to92, jedec to- 92 compliant straight lead configuration ( old to92am3) ( active) 2 2nndc current gain ic = 50 ma; vce = 5 v; see fig. pnp complements: 2n5400 and 2n5401. 0 madc) both types ( ic = 50 madc, ib = 5. collector cut- off current vs. features · low current ( max. 0 v) part number top mark package packing method 2n5551ta. 500 symbol dimensions in millimeters 1. 6 a collector- base voltage v ( br) cbo: 180 v operating and storage junction temperature range 2 t j， t stg: - 55℃ to + 150℃ electrical characteristics（ tamb= 25℃ unless otherwise specified）.
0 madc) 2n5550 2n5551 vce( sat) − − − 0. 20 vdc base− emitter saturation voltage ( ic. input and output capacitance vs. description: the central semiconductor 2n5550 and 2n5551 are silicon npn transistors designed for high voltage amplifier applications.
manufacturer: motorola, inc. 2n5551 description symbol test condition min typ max unit d y namic characteristics small si g nal current gain hfe ic= 1ma, vce= 10vf= 1khz transition fre q uenc y ft vce= 10v, ic= 10ma, mhz f= 100mhz out p ut ca p acitance cob vcb= 10v, ie= 0 - - 6.
留言列表
